IXTP3N1

IXTP3N100P vs IXTP3N100D2 vs IXTP3N110

 
PartNumberIXTP3N100PIXTP3N100D2IXTP3N110
DescriptionMOSFET 3 Amps 1000V 4.8 RdsMOSFET N-CH MOSFETS (D2) 1000V 3AMOSFET 3 Amps 1100V 4 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current3 A3 A-
Rds On Drain Source Resistance4.8 Ohms6 Ohms-
Vgs th Gate Source Threshold Voltage4.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation125 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenamePolar--
PackagingTubeTubeTube
Height16 mm--
Length10.66 mm--
SeriesIXTP3N100IXTP3N100IXTP3N110
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar Power MOSFET--
Width4.83 mm--
BrandIXYSIXYS-
Forward Transconductance Min1.5 S--
Fall Time29 ns-18 ns
Product TypeMOSFETMOSFET-
Rise Time27 ns-15 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time75 ns-32 ns
Typical Turn On Delay Time22 ns-17 ns
Unit Weight0.081130 oz0.081130 oz0.012346 oz
Package Case--TO-220-3
Pd Power Dissipation--150 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--3 A
Vds Drain Source Breakdown Voltage--1100 V
Rds On Drain Source Resistance--4 Ohms
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTP3N120 MOSFET MOSFET Id3 BVdass1200
IXTP3N100P MOSFET 3 Amps 1000V 4.8 Rds
IXTP3N100D2 MOSFET N-CH MOSFETS (D2) 1000V 3A
IXTP3N120 MOSFET N-CH 1.2KV 3A TO-220AB
IXTP3N100P Darlington Transistors MOSFET 3 Amps 1000V 4.8 Rds
IXTP3N110 MOSFET 3 Amps 1100V 4 Rds
IXTP3N100D2 IGBT Transistors MOSFET N-CH MOSFETS (D2) 1000V 3A
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