OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXTP3N5

IXTP3N50D2 vs IXTP3N50P ROHS vs IXTP3N50P

 
PartNumberIXTP3N50D2IXTP3N50P ROHSIXTP3N50P
DescriptionMOSFET N-CH MOSFETS (D2) 500V 3ADarlington Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation125 W--
ConfigurationSingle-Single
PackagingTube-Tube
Height16 mm--
Length10.66 mm--
SeriesIXTP3N50-IXTP3N50
Transistor Type1 N-Channel-1 N-Channel
TypeDepletion Mode MOSFET--
Width4.83 mm--
BrandIXYS--
Forward Transconductance Min1.3 S--
Fall Time42 ns-12 ns
Product TypeMOSFET--
Rise Time71 ns-15 ns
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time56 ns-38 ns
Typical Turn On Delay Time27 ns-15 ns
Unit Weight0.081130 oz-0.081130 oz
Tradename--PolarHV
Package Case--TO-220-3
Pd Power Dissipation--70 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--3.6 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--2 Ohms
Qg Gate Charge--9.3 nC
Forward Transconductance Min--2.5 S
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse 		IXTP3N50D2 MOSFET N-CH MOSFETS (D2) 500V 3A
IXTP3N50P ROHS New and Original
IXTP3N50P Darlington Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
IXTP3N50D2 IGBT Transistors MOSFET N-CH MOSFETS (D2) 500V 3A
Top