IXTP6N

IXTP6N100D2 vs IXTP6N50D2 vs IXTP6N50P

 
PartNumberIXTP6N100D2IXTP6N50D2IXTP6N50P
DescriptionMOSFET N-CH MOSFETS (D2) 1000V 6AMOSFET N-CH MOSFETS (D2) 500V 6AMOSFET 6 Amps 500V 1.1 Ohms Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV500 V-
Id Continuous Drain Current6 A6 A-
Rds On Drain Source Resistance2.2 Ohms550 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge95 nC96 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingleSingle
PackagingTubeTubeTube
Height16 mm16 mm-
Length10.66 mm10.66 mm-
SeriesIXTP6N100IXTP6N50IXTP6N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeDepletion Mode MOSFETDepletion Mode MOSFET-
Width4.83 mm4.83 mm-
BrandIXYSIXYS-
Forward Transconductance Min2.6 S2.8 S-
Fall Time47 ns43 ns26 ns
Product TypeMOSFETMOSFET-
Rise Time80 ns72 ns28 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns82 ns65 ns
Typical Turn On Delay Time25 ns28 ns26 ns
Unit Weight0.081130 oz0.081130 oz0.081130 oz
Package Case--TO-220-3
Pd Power Dissipation--100 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--6 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--1.1 Ohms
Forward Transconductance Min--5.5 S
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTP6N100D2 MOSFET N-CH MOSFETS (D2) 1000V 6A
IXTP6N50D2 MOSFET N-CH MOSFETS (D2) 500V 6A
IXTP6N50P TK5A50D New and Original
IXTP6N60 New and Original
IXTP6N50D2 Darlington Transistors MOSFET N-CH MOSFETS (D2) 500V 6A
IXTP6N100D2 Darlington Transistors MOSFET N-CH MOSFETS (D2) 1000V 6A
IXTP6N50P MOSFET 6 Amps 500V 1.1 Ohms Rds
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