PartNumber | IXTY08N100D2-TRL | IXTY08N100P | IXTY08N100D2 |
Description | Discrete Semiconductor Modules Depletion Mode MOSFET | MOSFET 0.8 Amps 1000V 20 Rds | MOSFET 8mAmps 1000V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | Depletion Mode | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 48 ns | 34 ns | 48 ns |
Id Continuous Drain Current | 800 mA | 800 mA | 800 mA |
Pd Power Dissipation | 60 W | 42 W | 60 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 21 Ohms | 20 Ohms | 21 Ohms |
Rise Time | 57 ns | 37 ns | 57 ns |
Factory Pack Quantity | 2500 | 70 | 70 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 34 ns | 35 ns | 34 ns |
Typical Turn On Delay Time | 28 ns | 19 ns | 28 ns |
Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | 1 kV |
Vgs th Gate Source Threshold Voltage | - 4 V | - | 2 V |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Channel Mode | - | Enhancement | Depletion |
Height | - | 2.38 mm | - |
Length | - | 6.73 mm | - |
Series | - | IXTY08N100 | IXTY08N100 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 6.22 mm | - |
Unit Weight | - | 0.012346 oz | 0.081130 oz |
Qg Gate Charge | - | - | 14.6 nC |
Forward Transconductance Min | - | - | 330 mS |