PartNumber | IXTY08N100D2-TRL | IXTY08N100D2 | IXTY08N100D2TRL |
Description | Discrete Semiconductor Modules Depletion Mode MOSFET | MOSFET 8mAmps 1000V | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | Depletion Mode | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Reel | Tube | - |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | N-Channel | - |
Fall Time | 48 ns | 48 ns | - |
Id Continuous Drain Current | 800 mA | 800 mA | - |
Pd Power Dissipation | 60 W | 60 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rds On Drain Source Resistance | 21 Ohms | 21 Ohms | - |
Rise Time | 57 ns | 57 ns | - |
Factory Pack Quantity | 2500 | 70 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Typical Turn Off Delay Time | 34 ns | 34 ns | - |
Typical Turn On Delay Time | 28 ns | 28 ns | - |
Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
Vgs th Gate Source Threshold Voltage | - 4 V | 2 V | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Qg Gate Charge | - | 14.6 nC | - |
Channel Mode | - | Depletion | - |
Series | - | IXTY08N100 | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 330 mS | - |
Unit Weight | - | 0.081130 oz | - |