IXTY1R4N12

IXTY1R4N120PHV vs IXTY1R4N120P-TRL vs IXTY1R4N120P

 
PartNumberIXTY1R4N120PHVIXTY1R4N120P-TRLIXTY1R4N120P
DescriptionDiscrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252DDiscrete Semiconductor Modules Polar Power MOSFETMOSFET N-CH 1200V 1.4A TO-252
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
RoHSYY-
ProductPower MOSFET ModulesPower MOSFET Modules-
TypePolarPolar-
Vgs Gate Source Voltage30 V30 V-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelReel-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-Channel-
Fall Time29 ns29 ns-
Id Continuous Drain Current1.4 A1.4 A-
Pd Power Dissipation86 W86 W-
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
Rds On Drain Source Resistance13 Ohms13 Ohms-
Rise Time27 ns27 ns-
Factory Pack Quantity25002500-
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
TradenamePolarPolar-
Typical Turn Off Delay Time78 ns78 ns-
Typical Turn On Delay Time25 ns25 ns-
Vds Drain Source Breakdown Voltage1200 V1200 V-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTY1R4N120PHV Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D
IXTY1R4N120P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY1R4N120P MOSFET N-CH 1200V 1.4A TO-252
IXTY1R4N120PHV MOSFET N-CH
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