PartNumber | IXZH10N50L2B | IXZH10N50L2A | IXZH10N50LA |
Description | MOSFET IXZH10N50L2B 10A 500V TO-247 w/Substrate Linear RightGate | RF MOSFET N-CHANNEL TO-247 | |
Manufacturer | IXYS | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247AD-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 10 A | - | - |
Rds On Drain Source Resistance | 1 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | - | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 200 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | IXZH10 | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 3.1 S | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 3 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 4 ns | - | - |
Typical Turn On Delay Time | 4 ns | - | - |