PartNumber | KSB1151YS | KSB1151YSTSSTU | KSB1151YSTSTU |
Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-126-3 | TO-126-3 | TO-126-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - 60 V |
Collector Base Voltage VCBO | - 60 V | - 60 V | - 60 V |
Emitter Base Voltage VEBO | - 7 V | - 7 V | - 7 V |
Collector Emitter Saturation Voltage | - 0.14 V | - 0.14 V | - 0.14 V |
Maximum DC Collector Current | 5 A | 5 A | 5 A |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | KSB1151 | KSB1151 | - |
DC Current Gain hFE Max | 400 | 400 | 400 |
Height | 1.5 mm | 1.5 mm | 1.5 mm |
Length | 8 mm | 8 mm | 8 mm |
Packaging | Bulk | Tube | Tube |
Width | 3.25 mm | 3.25 mm | 3.25 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Pd Power Dissipation | 1300 mW | 1300 mW | 20 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 60 | 60 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.026843 oz | 0.026738 oz | 0.026738 oz |
Part # Aliases | - | KSB1151YSTSSTU_NL | KSB1151YSTSTU_NL |