MJD112T4

MJD112T4G vs MJD112T4G J112 vs MJD112T4-CUT TAPE

 
PartNumberMJD112T4GMJD112T4G J112MJD112T4-CUT TAPE
DescriptionDarlington Transistors 2A 100V Bipolar Power NPN
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max100 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO100 V--
Maximum DC Collector Current2 A--
Maximum Collector Cut off Current20 uA--
Pd Power Dissipation20 W--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3 (DPAK)--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD112--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min200, 500, 1000--
Product TypeDarlington Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.016579 oz--
Manufacturer Part # Description RFQ
MJD112T4G Darlington Transistors 2A 100V Bipolar Power NPN
MJD112T4G J112 New and Original
MJD112T4G/MJD117T4G New and Original
MJD112T4G/TO-251 New and Original
MJD112T4-CUT TAPE New and Original
MJD112T4G-CUT TAPE New and Original
STMicroelectronics
STMicroelectronics
MJD112T4 Darlington Transistors NPN Power Darlington
MJD112T4 Darlington Transistors NPN Power Darlington
ON Semiconductor
ON Semiconductor
MJD112T4G Darlington Transistors 2A 100V Bipolar Power NPN
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