PartNumber | MJD32CT4-A | MJD32CT4 |
Description | Bipolar Transistors - BJT LO PWR PNP PW TRANS | Bipolar Transistors - BJT PNP Gen Pur Switch |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 100 V | 100 V |
Collector Base Voltage VCBO | 100 V | 100 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Maximum DC Collector Current | 3 A | 3 A |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | MJD32CT4-A | MJD32C |
Height | 2.4 mm (Max) | 2.4 mm |
Length | 6.6 mm (Max) | 6.6 mm |
Packaging | Reel | Reel |
Width | 6.2 mm (Max) | 6.2 mm |
Brand | STMicroelectronics | STMicroelectronics |
Pd Power Dissipation | 15000 mW | 15 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.063493 oz | 0.063493 oz |
Collector Emitter Saturation Voltage | - | - 1.2 V |
Continuous Collector Current | - | 3 A |
DC Collector/Base Gain hfe Min | - | 20 |