PartNumber | MJE5851G | MJE5850G | MJE5851G/MJE5852G |
Description | Bipolar Transistors - BJT 8A 350V 80W PNP | Bipolar Transistors - BJT 8A 300V 80W PNP | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 350 V | 300 V | - |
Collector Base Voltage VCBO | 400 V | 350 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 2 V | 2 V | - |
Maximum DC Collector Current | 8 A | 8 A | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | MJE5851 | MJE5850 | - |
Height | 15.75 mm | 15.75 mm | - |
Length | 10.53 mm | 10.53 mm | - |
Packaging | Tube | Tube | - |
Width | 4.83 mm | 4.83 mm | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Continuous Collector Current | 8 A | 8 A | - |
DC Collector/Base Gain hfe Min | 15 | 15 | - |
Pd Power Dissipation | 80 W | 80 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |