MJE58

MJE5851G vs MJE5850G vs MJE5851G/MJE5852G

 
PartNumberMJE5851GMJE5850GMJE5851G/MJE5852G
DescriptionBipolar Transistors - BJT 8A 350V 80W PNPBipolar Transistors - BJT 8A 300V 80W PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max350 V300 V-
Collector Base Voltage VCBO400 V350 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage2 V2 V-
Maximum DC Collector Current8 A8 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJE5851MJE5850-
Height15.75 mm15.75 mm-
Length10.53 mm10.53 mm-
PackagingTubeTube-
Width4.83 mm4.83 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current8 A8 A-
DC Collector/Base Gain hfe Min1515-
Pd Power Dissipation80 W80 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5050-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.211644 oz-
Manufacturer Part # Description RFQ
MJE5852G Bipolar Transistors - BJT 8A 400V 80W PNP
MJE5851G Bipolar Transistors - BJT 8A 350V 80W PNP
MJE5850G Bipolar Transistors - BJT 8A 300V 80W PNP
MJE5851G/MJE5852G New and Original
STMicroelectronics
STMicroelectronics
MJE5852 Bipolar Transistors - BJT PNP High Voltage
ON Semiconductor
ON Semiconductor
MJE5850 TRANS PNP 300V 8A TO220AB
MJE5851 TRANS PNP 350V 8A TO220AB
MJE5852 TRANS PNP 400V 8A TO220AB
MJE5851G Bipolar Transistors - BJT 8A 350V 80W PNP
MJE5850G Bipolar Transistors - BJT 8A 300V 80W PNP
MJE5852G Bipolar Transistors - BJT 8A 400V 80W PNP
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