MJE5851G

Mfr. #:: MJE5851G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT 8A 350V 80W PNP
Lifecycle:: New from this manufacturer.
Datasheet:: MJE5851G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MJE5851G Datasheet MJE5851G Datasheet (P4-P6)MJE5851G Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Transistor Polarity:: PNP

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 350 V

Collector- Base Voltage VCBO:: 400 V

Emitter- Base Voltage VEBO:: 6 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum DC Collector Current:: 8 A

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Series:: MJE5851

Height:: 15.75 mm

Length:: 10.53 mm

Packaging:: Tube

Width:: 4.83 mm

Brand:: ON Semiconductor

Continuous Collector Current:: 8 A

DC Collector/Base Gain hfe Min:: 15

Pd - Power Dissipation:: 80 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 50

Subcategory:: Transistors

Unit Weight:: 0.211644 oz

Tags: MJE5851, MJE58, MJE5, MJE

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE5851G Description

***enic: 350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***emi: 8.0 A, 350 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ment14 APAC: BIPOLAR TRANSISTOR, PNP, -350V, TO-220;

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***nell: MJE5850, SINGLE BIPOLAR TRANSISTORS;

***el Electronic: RES SMD 7.68K OHM 1% 1/2W 1206

***roFlash: ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB

***ical: Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 400 V PNP Bipolar Power Transistor

***SIT Distribution GmbH: Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:

***ark: RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***enic: 300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***ical: Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***(Formerly Allied Electronics): Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G

***nell: TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

Market price

Part #	Mfg.	Description	Stock	Price
MJE5851G DISTI # V99:2348_07278929	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	5000:$1.2130 2500:$1.2200 1000:$1.2580 500:$1.3110 100:$1.5049 10:$1.9280 1:$2.0630
MJE5851G DISTI # MJE5851GOS-ND	ON Semiconductor	TRANS PNP 350V 8A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	350In Stock	1000:$1.4992 500:$1.8094 100:$2.2023 50:$2.5848 1:$3.0500
MJE5851G DISTI # 26621158	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	4000	400:$1.2496
MJE5851G DISTI # 27149027	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	100:$1.5200 10:$1.9250 5:$2.0200
MJE5851G DISTI # MJE5851G	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5851G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1072	1:$1.7900 10:$1.6900 25:$1.6900 50:$1.6900 100:$1.2900 500:$1.2900 1000:$1.2900
MJE5851G DISTI # 42K1299	ON Semiconductor	BIPOLAR TRANSISTOR, PNP, -350V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:-8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$3.1600 10:$2.5700 25:$2.0800 100:$2.0200 250:$1.8400 500:$1.5300 1000:$1.4300 2500:$1.3800
MJE5851G DISTI # 863-MJE5851G	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Compliant	402	1:$2.9000 10:$2.4700 100:$1.9700 500:$1.7300 1000:$1.4300
MJE5852G DISTI # 863-MJE5852G	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Compliant	380	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
MJE5851 DISTI # 863-MJE5851	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Not compliant	0
MJE5851G	ON Semiconductor	RoHS: Not Compliant	14	1000:$1.4300 500:$1.5100 100:$1.5700 25:$1.6400 1:$1.7700
MJE5851G DISTI # C1S541900354298	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	100:$1.5200 10:$1.9250 1:$2.0200

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MJE5851G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes