 |  |  | |
| PartNumber | MJE5851G | MJE5851 | MJE5851G/MJE5852G |
| Description | Bipolar Transistors - BJT 8A 350V 80W PNP | TRANS PNP 350V 8A TO220AB | |
| Manufacturer | ON Semiconductor | FSC | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 350 V | - | - |
| Collector Base Voltage VCBO | 400 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 8 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJE5851 | - | - |
| Height | 15.75 mm | - | - |
| Length | 10.53 mm | - | - |
| Packaging | Tube | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 8 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| MJE5851G | Bipolar Transistors - BJT 8A 350V 80W PNP | ||
| MJE5851G/MJE5852G | New and Original | ||
ON Semiconductor |
MJE5851 | TRANS PNP 350V 8A TO220AB | |
| MJE5851G | Bipolar Transistors - BJT 8A 350V 80W PNP |