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MJE5851G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1 Publication Order Number:
MJE5850/D
MJE5850, MJE5851,
MJE5852
Switch-mode Series PNP
Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
switch−mode applications.
Features
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
• Fast Turn−Off Times
• Operating Temperature Range −65 to +150_C
• 100_C Performance Specified for:
♦ Reversed Biased SOA with Inductive Loads
♦ Switching Times with Inductive Loads
♦ Saturation Voltages
♦ Leakage Currents
• Complementary to the MJE13007 Series
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
V
CEO(sus)
300
350
400
Vdc
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
V
CEV
350
400
450
Vdc
Emitter Base Voltage V
EB
6.0 Vdc
Collector Current − Continuous (Note 1) I
C
8.0 Adc
Collector Current − Peak (Note 1) I
CM
16 Adc
Base Current − Continuous (Note 1) I
B
4.0 Adc
Base Current − Peak (Note 1) I
BM
8.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
80
0.640
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
8 AMPERE
PCP SILICON
POWER TRANSISTORS
300−350−400 VOLTS
80 WATTS
TO−220
CASE 221A−09
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
MJE585x = Device Code
x = 0, 1, or 2
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MJE585xG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2, 4
4
MJE5850, MJE5851, MJE5852
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.25
_C/W
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T
L
275
_C
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mA, I
B
= 0)
MJE5850
MJE5851
MJE5852
V
CEO(sus)
300
350
400
−
−
−
−
−
−
Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
I
CEV
−
−
−
−
0.5
2.5
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CEV
, R
BE
= 50 W, T
C
= 100_C)
I
CER
− − 3.0
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
I
EBO
− − 1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
S/b
See Figure 12
Clamped Inductive SOA with base reverse biased RBSOA See Figure 13
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 5 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5 Vdc)
h
FE
15
5
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 1.0 Adc)
(I
C
= 8.0 Adc, I
B
= 3.0 Adc)
(I
C
= 4.0 Adc, I
B
= 1.0 Adc, T
C
= 100_C)
V
CE(sat)
−
−
−
−
−
−
2.0
5.0
2.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 1.0 Adc)
(I
C
= 4.0 Adc, I
B
= 1.0 Adc, T
C
= 100_C)
V
BE(sat)
−
−
−
−
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 kHz)
C
ob
− 270 −
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(V
CC
= 250 Vdc, I
C
= 4.0 A, I
B1
= 1.0 A,
t
p
= 50 ms, Duty Cycle ≤ 2%)
t
d
− 0.025 0.1
ms
Rise Time t
r
− 0.100 0.5
ms
Storage Time
(V
CC
= 250 Vdc, I
C
= 4.0 A, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, t
p
= 50 ms, Duty Cycle ≤ 2%)
t
s
− 0.60 2.0
ms
Fall Time t
f
− 0.11 0.5
ms
Inductive Load, Clamped (Table 1)
Storage Time
(I
CM
= 4 A, V
CEM
= 250 V, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, T
C
= 100_C)
t
sv
− 0.8 3.0
ms
Crossover Time t
c
− 0.4 1.5
ms
Fall Time t
fi
− 0.1 −
ms
Storage Time
(I
CM
= 4 A, V
CEM
= 250 V, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, T
C
= 25_C)
t
sv
− 0.5 −
ms
Crossover Time t
c
− 0.125 −
ms
Fall Time t
fi
− 0.1 −
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: PW = 300 ms. Duty Cycle ≤ 2%
MJE5850, MJE5851, MJE5852
www.onsemi.com
3
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (nA)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)I
C
, COLLECTOR CURRENT (AMPS)
1.2
2.0
0.8
0
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
2.0
0.3 0.7 5.0 10
10
3.0
Figure 2. Collector Saturation Region
0.01
I
B
, BASE CURRENT (AMPS)
0.02 0.05
1.2
0.4
0
100
h
FE
, DC CURRENT GAIN
0.1 0.2 0.5 10
Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage
Figure 5. Collector Cutoff Region
2.0
0.8
10
5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
0
0
T
J
= 150°C
20
0.5 2.0
-0.4
Figure 6. Capacitance
3000
V
R
, REVERSE VOLTAGE (VOLTS)
C
ib
0.1
10
4
10
3
10
2
10
1
+0.2 +0.1
100°C
REVERSE
FORWARD
25°C
V
CE
= 200 V
200
100
20 500 1000
1.6
0.4
T
J
= 25°C
I
C
= 0.25 A
5.0
0.1
1.0 3.0 7.0
0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0
70
50
30
7.0
2000
1000
500
30
50
20010050105.01.00.50.2
V, VOLTAGE (VOLTS)
200
-0.3-0.2 -0.5-0.1
V
CE
= 5 V
1.0 A
1.0 2.0 5.0
1.6
I
C
/I
B
= 4
1.2
2.0
0.8
0
0.4
0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0
1.6
0.2
0.70.7
2.5 A 5.0 A
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
I
C
/I
B
= 4
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
C
ob
T
J
= 25°C
TYPICAL ELECTRICAL CHARACTERISTICS
P1-P3P4-P6P7-P8

MJE5851G

Mfr. #:
Buy MJE5851G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 8A 350V 80W PNP
Lifecycle:
New from this manufacturer.
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