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| PartNumber | MRF5S19060NBR1 | MRF5S19060NR1 | MRF5S19060NB |
| Description | RF MOSFET Transistors 1990MHZ 60W 28V TO272WB4N | RF MOSFET Transistors 1990MHZ 60W 28V TO270WB4N | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | E | E | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
| Gain | 14 dB | 14 dB | - |
| Output Power | 12 W | 12 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-272-4 | TO-270-4 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 2.64 mm | 2.64 mm | - |
| Length | 23.67 mm | 17.58 mm | - |
| Operating Frequency | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 9.07 mm | 9.07 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Moisture Sensitive | Yes | Yes | - |
| Pd Power Dissipation | 218.8 W | 218.8 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - 0.5 V, 15 V | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Unit Weight | 0.067412 oz | 0.058073 oz | - |
| Series | - | MRF5S19060N | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF5S19060NBR1 | RF MOSFET Transistors 1990MHZ 60W 28V TO272WB4N | |
| MRF5S19060NR1 | RF MOSFET Transistors 1990MHZ 60W 28V TO270WB4N | ||
| MRF5S19060NB | New and Original | ||
NXP Semiconductors |
MRF5S19060NBR1 | FET RF 65V 1.99GHZ TO-272-4 | |
| MRF5S19060NR1 | FET RF 65V 1.99GHZ TO-270-4 |