PartNumber | MRF6S19120HR3 | MRF6S19120HSR3 | MRF6S19120HR5 |
Description | RF MOSFET Transistors HV6 19W N-CDMA | FET RF 68V 1.99GHZ NI-780S | FET RF 68V 1.99GHZ NI-780 |
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 68 V | - | - |
Gain | 15 dB | - | - |
Output Power | 19 W | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | NI-780-3 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Height | 4.32 mm | - | - |
Length | 34.16 mm | - | - |
Operating Frequency | 1.93 GHz to 1.99 GHz | - | - |
Type | RF Power MOSFET | - | - |
Width | 9.91 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Pd Power Dissipation | 407 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 250 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Unit Weight | 0.226635 oz | - | - |