 | |  | |
| PartNumber | MRF6S19140HSR3 | MRF6S19140HSR5 | MRF6S19140HS |
| Description | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 68 V | 68 V | - |
| Gain | 16 dB | 16 dB | - |
| Output Power | 29 W | 29 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-880S-3 | NI-880S-3 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 5.08 mm | 5.08 mm | - |
| Length | 23.24 mm | 23.24 mm | - |
| Operating Frequency | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | - |
| Series | MRF6S19140H | - | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 13.8 mm | 13.8 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Pd Power Dissipation | 52.8 W | 52.8 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 250 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Part # Aliases | 935325311128 | - | - |
| Unit Weight | 0.238367 oz | 0.238367 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF6S19140HSR3 | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS | |
| MRF6S19140HSR5 | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS | ||
| MRF6S19140HS | New and Original | ||
NXP Semiconductors |
MRF6S19140HSR5 | FET RF 68V 1.99GHZ NI-880S | |
| MRF6S19140HSR3 | FET RF 68V 1.99GHZ NI-880S |