PartNumber | MRF6V2010GNR1 | MRF6V2010GNR5 | MRF6V2010NBR1 |
Description | RF MOSFET Transistors VHV6 10W TO270-2GN | RF MOSFET Transistors VHV6 10W TO270-2GN | RF MOSFET Transistors VHV6 10W TO272-2N |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | E | E | E |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 110 V | 110 V | 110 V |
Gain | 23.9 dB | 23.9 dB | - |
Output Power | 10 W | 10 W | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-270-2 | TO-270-2 | TO-272-3 |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | Single |
Operating Frequency | 450 MHz | 450 MHz | - |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 500 | 50 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | 10 V | 10 V | - 5 V, 10 V |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Part # Aliases | 935321298528 | - | 935319274528 |
Unit Weight | 0.019330 oz | 0.019330 oz | 0.042191 oz |
Minimum Operating Temperature | - | - | - 65 C |
Height | - | - | 2.64 mm |
Length | - | - | 23.67 mm |
Series | - | - | MRF6V2010N |
Width | - | - | 6.4 mm |
Channel Mode | - | - | Enhancement |