PartNumber | MRF6V2150NBR1 | MRF6V2150BNR1 | MRF6V2150NB |
Description | RF MOSFET Transistors VHV6 150W | ||
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | E | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 110 V | - | - |
Gain | 25 dB | - | - |
Output Power | 150 W | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-272-4 | - | - |
Packaging | Reel | - | - |
Configuration | Single Dual Drain Dual Gate | - | - |
Height | 2.64 mm | - | - |
Length | 23.67 mm | - | - |
Operating Frequency | 220 MHz | - | - |
Series | MRF6V2150N | - | - |
Type | RF Power MOSFET | - | - |
Width | 9.07 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.62 V | - | - |
Part # Aliases | 935316841528 | - | - |
Unit Weight | 0.067412 oz | - | - |