PartNumber | MRFX1K80GNR5 | MRFX1K80H-128MHZ | MRFX1K80H-230MHZ |
Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | RF Development Tools 3500W pulse - 2 up - 128MHz | MRFX1K80H 230MHZ REF DESIGN BRD |
Manufacturer | NXP | NXP | - |
Product Category | RF MOSFET Transistors | RF Development Tools | - |
RoHS | Y | Y | - |
Transistor Polarity | Dual N-Channel | - | - |
Technology | Si | - | - |
Id Continuous Drain Current | 43 A | - | - |
Vds Drain Source Breakdown Voltage | - 500 mV, 179 V | - | - |
Gain | 24.4 dB | - | - |
Output Power | 1.8 kW | - | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | OM-1230G-4L | - | - |
Packaging | Reel | - | - |
Operating Frequency | 1.8 MHz to 400 MHz | - | - |
Series | MRFX1K80 | MRFX1K80 | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Brand | NXP Semiconductors | NXP Semiconductors | - |
Forward Transconductance Min | 44.7 S | - | - |
Number of Channels | 2 Channel | - | - |
Moisture Sensitive | Yes | - | - |
Pd Power Dissipation | 3333 W | - | - |
Product Type | RF MOSFET Transistors | RF Development Tools | - |
Factory Pack Quantity | 50 | 1 | - |
Subcategory | MOSFETs | Development Tools | - |
Vgs Gate Source Voltage | - 6 V, 10 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Part # Aliases | 935362677578 | 935362181598 | - |