| PartNumber | MRFX600HR5 | MRFX600HSR5 | MRFX600GSR5 |
| Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Technology | Si | Si | Si |
| Id Continuous Drain Current | 32 A | 32 A | 32 A |
| Vds Drain Source Breakdown Voltage | 193 V | 193 V | 193 V |
| Gain | 26.4 dB | 26.4 dB | 26.4 dB |
| Output Power | 600 W | 600 W | 600 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Mounting Style | Screw Mount | SMD/SMT | SMD/SMT |
| Package / Case | NI-780H-4L | NI-780S-4L | NI-780GS-4L |
| Packaging | Reel | Reel | Reel |
| Operating Frequency | 1.8 MHz to 400 MHz | 1.8 MHz to 400 MHz | 1.8 MHz to 400 MHz |
| Series | MRFX600 | MRFX600 | MRFX600 |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Pd Power Dissipation | 1.333 kW | 1.333 kW | 1.333 kW |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Vgs Gate Source Voltage | - 6 V, 10 V | - 6 V, 10 V | - 6 V, 10 V |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
| Part # Aliases | 935376369178 | 935376371178 | 935376368178 |