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| PartNumber | NE650103M-A | NE65010 | NE650103M |
| Description | RF JFET Transistors L&S Band GaAs MESFET | RF JFET Transistors | |
| Manufacturer | CEL | - | NEC |
| Product Category | RF JFET Transistors | - | RF FETs |
| RoHS | Y | - | - |
| Transistor Type | MESFET | - | - |
| Technology | GaAs | - | - |
| Gain | 11 dB | - | - |
| Vds Drain Source Breakdown Voltage | 15 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 7 V | - | - |
| Id Continuous Drain Current | 7 A | - | - |
| Output Power | 40 dBm | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 33 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | 3M | - | - |
| Packaging | Bulk | - | - |
| Operating Frequency | 2.3 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs MESFET | - | - |
| Brand | CEL | - | - |
| P1dB Compression Point | 40 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |