 | | | |
| PartNumber | NE6510179A-EVPW19 | NE6510179A-EVPW26 | NE6510179A-A |
| Description | RF Development Tools For NE6510179A-A Power at 1.9 GHz | RF Development Tools For NE6510179A-A Power at 2.6 GHz | RF JFET Transistors L&S Band GaAs HJFET |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF Development Tools | RF Development Tools | RF JFET Transistors |
| RoHS | N | N | Y |
| Frequency | 1.9 GHz | 1.9 GHz | - |
| Brand | CEL | CEL | CEL |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Product Type | RF Development Tools | RF Development Tools | RF JFET Transistors |
| Subcategory | Development Tools | Development Tools | Transistors |
| Transistor Type | - | - | HFET |
| Technology | - | - | GaAs |
| Gain | - | - | 10 dB |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 8 V |
| Vgs Gate Source Breakdown Voltage | - | - | - 4 V |
| Id Continuous Drain Current | - | - | 2.8 A |
| Output Power | - | - | 35 dBm |
| Pd Power Dissipation | - | - | 15 W |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | 79A |
| Packaging | - | - | Bulk |
| Operating Frequency | - | - | 1.9 GHz |
| Product | - | - | RF JFET |
| Type | - | - | GaAs HFET |
| P1dB Compression Point | - | - | 35 dBm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
CEL |
NE6510179A-EVPW19 | RF Development Tools For NE6510179A-A Power at 1.9 GHz | |
| NE6510179A-EVPW26 | RF Development Tools For NE6510179A-A Power at 2.6 GHz | ||
| NE6510179A-A | RF JFET Transistors L&S Band GaAs HJFET | ||
| NE6510179A-A | FET RF 8V 1.9GHZ 79A | ||
| NE6510179A | RF JFET Transistors L&S Band GaAs HJFET | ||
| NE6510179A , EM6323LXSP5 | New and Original | ||
| NE6510179A-T | New and Original | ||
| NE6510179A-T1 | New and Original | ||
| NE6510179A-T1-AK | New and Original |