PartNumber | NE651R479A-T1-A | NE651R479A-T1 | NE651R479A-T1(NE651R479 |
Description | RF JFET Transistors L&S Band GaAs HJFET | ||
Manufacturer | CEL | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HFET | - | - |
Technology | GaAs | - | - |
Gain | 12 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 8 V | - | - |
Vgs Gate Source Breakdown Voltage | - 4 V | - | - |
Id Continuous Drain Current | 1 A | - | - |
Output Power | 30 dBm | - | - |
Maximum Operating Temperature | + 125 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | 79A | - | - |
Packaging | Reel | - | - |
Operating Frequency | 1.9 GHz | - | - |
Product | RF JFET | - | - |
Type | GaAs HFET | - | - |
Brand | CEL | - | - |
P1dB Compression Point | 27 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |