NE651R479A-T

NE651R479A-T1-A vs NE651R479A-T1 vs NE651R479A-T1(NE651R479

 
PartNumberNE651R479A-T1-ANE651R479A-T1NE651R479A-T1(NE651R479
DescriptionRF JFET Transistors L&S Band GaAs HJFET
ManufacturerCEL--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeHFET--
TechnologyGaAs--
Gain12 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage8 V--
Vgs Gate Source Breakdown Voltage- 4 V--
Id Continuous Drain Current1 A--
Output Power30 dBm--
Maximum Operating Temperature+ 125 C--
Pd Power Dissipation2.5 W--
Mounting StyleSMD/SMT--
Package / Case79A--
PackagingReel--
Operating Frequency1.9 GHz--
ProductRF JFET--
TypeGaAs HFET--
BrandCEL--
P1dB Compression Point27 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
CEL
CEL
NE651R479A-T1-A RF JFET Transistors L&S Band GaAs HJFET
NE651R479A-T1-A FET RF 8V 1.9GHZ 79A
NE651R479A-T1 New and Original
NE651R479A-T1(NE651R479 New and Original
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