PartNumber | NSS1C200LT1G | NSS1C200 | NSS1C200LT1G-CUT TAPE |
Description | Bipolar Transistors - BJT 100V LO VCE(SAT) TRA PNP | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 140 V | - | - |
Emitter Base Voltage VEBO | 7 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 120 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | NSS1C200L | - | - |
DC Current Gain hFE Max | 150 | - | - |
Height | 0.94 mm | - | - |
Length | 2.9 mm | - | - |
Packaging | Reel | - | - |
Width | 1.3 mm | - | - |
Brand | ON Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 710 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000282 oz | - | - |