NSS1C201

NSS1C201LT1G vs NSS1C201MZ4T1G vs NSS1C201MZ

 
PartNumberNSS1C201LT1GNSS1C201MZ4T1GNSS1C201MZ
DescriptionBipolar Transistors - BJT NPN 100V LOW V-SAT SOT23Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V100 V-
Collector Base Voltage VCBO140 V140 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage150 mV180 mV-
Maximum DC Collector Current3 A2 A-
Gain Bandwidth Product fT110 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNSS1C201LNSS1C201MZ4-
DC Current Gain hFE Max360150-
Height0.94 mm1.57 mm-
Length2.9 mm6.5 mm-
PackagingReelReel-
Width1.3 mm3.5 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min40120-
Pd Power Dissipation710 mW2000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30001000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.003951 oz-
Manufacturer Part # Description RFQ
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
NSS1C201LT1G Bipolar Transistors - BJT NPN 100V LOW V-SAT SOT23
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ New and Original
NSS1C201MZ4T1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NSS1C201LT1G Bipolar Transistors - BJT NPN 100V LOW V-SAT SOT23
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
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