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NTB6410

NTB6410ANT4G vs NTB6410AN vs NTB6410ANG

 
PartNumberNTB6410ANT4GNTB6410ANNTB6410ANG
DescriptionMOSFET NFET D2PAK 100V 76A 13MOHMOSFET N-CH 100V 76A D2PAK
ManufacturerON SemiconductorONON Semiconductor
Product CategoryMOSFETFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current76 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation188 W--
ConfigurationSingle-Single
PackagingReel-Bulk
SeriesNTB6410AN-NTB6410AN
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Forward Transconductance Min40 S--
Fall Time190 ns-190 ns
Product TypeMOSFET--
Rise Time170 ns-170 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns-120 ns
Typical Turn On Delay Time17 ns-17 ns
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--188 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--76 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--2 V to 4 V
Rds On Drain Source Resistance--11 mOhms
Qg Gate Charge--120 nC
Forward Transconductance Min--40 S
Manufacturer Part # Description RFQ
NTB6410ANT4G MOSFET NFET D2PAK 100V 76A 13MOH
NTB6410AN New and Original
NTB6410ANT4G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor 		NTB6410ANG MOSFET N-CH 100V 76A D2PAK
NTB6410ANT4G MOSFET N-CH 100V 76A D2PAK
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