PartNumber | NTB6412ANT4G | NTB6412ANG | NTB6412NG |
Description | MOSFET NFET D2PAK 100V 59A 20MO | MOSFET N-CH 100V 58A D2PAK | |
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 41 A | - | - |
Rds On Drain Source Resistance | 18.2 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 100 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 167 W | - | - |
Packaging | Reel | - | - |
Series | NTB6412AN | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 31 S | - | - |
Fall Time | 126 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 140 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 70 ns | - | - |
Typical Turn On Delay Time | 16 ns | - | - |
Unit Weight | 0.139332 oz | - | - |