NTB6412

NTB6412ANT4G vs NTB6412ANG vs NTB6412NG

 
PartNumberNTB6412ANT4GNTB6412ANGNTB6412NG
DescriptionMOSFET NFET D2PAK 100V 59A 20MOMOSFET N-CH 100V 58A D2PAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current41 A--
Rds On Drain Source Resistance18.2 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation167 W--
PackagingReel--
SeriesNTB6412AN--
BrandON Semiconductor--
Forward Transconductance Min31 S--
Fall Time126 ns--
Product TypeMOSFET--
Rise Time140 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time16 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTB6412ANT4G MOSFET NFET D2PAK 100V 59A 20MO
NTB6412ANG MOSFET N-CH 100V 58A D2PAK
NTB6412ANT4G IGBT Transistors MOSFET NFET D2PAK 100V 59A 20MO
NTB6412NG New and Original
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