NTJD4152PT1

NTJD4152PT1G vs NTJD4152PT1G , FLZ8V2B vs NTJD4152PT1G-CUT TAPE

 
PartNumberNTJD4152PT1GNTJD4152PT1G , FLZ8V2BNTJD4152PT1G-CUT TAPE
DescriptionMOSFET 20V 0.88mA P-Channel ESD Protection
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current880 mA--
Rds On Drain Source Resistance1 Ohms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage1.8 V--
Qg Gate Charge2.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation272 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesNTJD4152P--
Transistor Type2 P-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor--
Forward Transconductance Min3 S--
Fall Time3.5 ns--
Product TypeMOSFET--
Rise Time6.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.5 ns--
Typical Turn On Delay Time5.8 ns--
Unit Weight0.000265 oz--
Manufacturer Part # Description RFQ
NTJD4152PT1G MOSFET 20V 0.88mA P-Channel ESD Protection
NTJD4152PT1G , FLZ8V2B New and Original
NTJD4152PT1H New and Original
NTJD4152PT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTJD4152PT1 MOSFET 20V 0.88A P-Channel
NTJD4152PT1G MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1 MOSFET 2P-CH 20V 0.88A SOT-363
Top