 |  | | |
| PartNumber | NVD5117PLT4G | NVD5117OLT4G | NVD5117PL |
| Description | MOSFET 60V T1 PCH DPAK | ||
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 85 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 118 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | NVD5117PL | - | NVD5117PL |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 132 ns | - | 132 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 195 ns | - | 195 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | 50 ns |
| Typical Turn On Delay Time | 22 ns | - | 22 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DPAK-3 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 4.1W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 4800pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 11A (Ta), 61A (Tc) |
| Rds On Max Id Vgs | - | - | 16 mOhm @ 29A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 85nC @ 10V |
| Pd Power Dissipation | - | - | 118 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 61 A |
| Vds Drain Source Breakdown Voltage | - | - | - 60 V |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Qg Gate Charge | - | - | 85 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NVD5117PLT4G-VF01 | MOSFET PFET DPAK 60V 61A 16MOHM | ||
| NVD5117PLT4G | MOSFET 60V T1 PCH DPAK | ||
| NVD5117OLT4G | New and Original | ||
| NVD5117PL | New and Original | ||
| NVD5117PLT4G | MOSFET P-CH 60V 61A DPAK | ||
ON Semiconductor |
NVD5117PLT4G-VF01 | MOSFET P-CH 60V 61A DPAK |