PartNumber | NVD5890NLT4G | NVD5890NLT4G-VF01 | NVD5890NL |
Description | MOSFET NFET DPAK 40V 123A 3.7MOH | MOSFET NFET DPAK 40V 123A 3.7MOH | |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | DPAK-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 123 A | 123 A | - |
Rds On Drain Source Resistance | 3.7 mOhms | 3.7 mOhms | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Series | NVD5890NL | - | NVD5890NL |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 84 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 107 W | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 16.3 S | - |
Fall Time | - | 11 ns | - |
Rise Time | - | 35 ns | - |
Typical Turn Off Delay Time | - | 38 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |
Package Case | - | - | TO-252-3 |
Id Continuous Drain Current | - | - | 123 A |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Rds On Drain Source Resistance | - | - | 3.7 mOhms |