NVD5890NL

NVD5890NLT4G vs NVD5890NLT4G-VF01 vs NVD5890NL

 
PartNumberNVD5890NLT4GNVD5890NLT4G-VF01NVD5890NL
DescriptionMOSFET NFET DPAK 40V 123A 3.7MOHMOSFET NFET DPAK 40V 123A 3.7MOH
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3DPAK-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current123 A123 A-
Rds On Drain Source Resistance3.7 mOhms3.7 mOhms-
ConfigurationSingleSingle-
QualificationAEC-Q101--
PackagingReelReelReel
SeriesNVD5890NL-NVD5890NL
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz-0.139332 oz
Vgs th Gate Source Threshold Voltage-1.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-84 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-107 W-
Channel Mode-Enhancement-
Forward Transconductance Min-16.3 S-
Fall Time-11 ns-
Rise Time-35 ns-
Typical Turn Off Delay Time-38 ns-
Typical Turn On Delay Time-12 ns-
Package Case--TO-252-3
Id Continuous Drain Current--123 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--3.7 mOhms
Manufacturer Part # Description RFQ
NVD5890NLT4G MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5890NLT4G-VF01 MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5890NLT4G-VF01 MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5890NL New and Original
ON Semiconductor
ON Semiconductor
NVD5890NLT4G RF Bipolar Transistors MOSFET NFET DPAK 40V 123A 3.7MOH
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