NVF3055L10

NVF3055L108T1G vs NVF3055L108 vs NVF3055L108T1G-CUT TAPE

 
PartNumberNVF3055L108T1GNVF3055L108NVF3055L108T1G-CUT TAPE
DescriptionMOSFET NFET 60V 3A 0.120R
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage15 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation2.1 W--
ConfigurationSingleSingle-
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesNTF3055L108NTF3055L108-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.008818 oz0.008826 oz-
Package Case-TO-261-4, TO-261AA-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1.3W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-440pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3A (Ta)-
Rds On Max Id Vgs-120 mOhm @ 1.5A, 5V-
Vgs th Max Id-2V @ 250μA-
Gate Charge Qg Vgs-15nC @ 5V-
Pd Power Dissipation-2.1 W-
Vgs Gate Source Voltage-15 V-
Id Continuous Drain Current-3 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-120 mOhms-
Manufacturer Part # Description RFQ
NVF3055L108T3G MOSFET NFET 60V 3A 0.120R
NVF3055L108T1G MOSFET NFET 60V 3A 0.120R
NVF3055L108 New and Original
NVF3055L108T1G-CUT TAPE New and Original
NVF3055L108T3G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NVF3055L108T1G MOSFET N-CH 60V 3A SOT223
NVF3055L108T3G RF Bipolar Transistors MOSFET NFET 60V 3A 0.120R
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