PartNumber | PBSS3540M,315 | PBSS3540MB,315 |
Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT 40 V, 0.5 A PNP low VCEsat transistor |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | - |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DFN-1006-3 | DFN-1006B-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 40 V | - 40 V |
Collector Base Voltage VCBO | 40 V | - 40 V |
Emitter Base Voltage VEBO | 6 V | - 6 V |
Maximum DC Collector Current | 0.5 A | - 1 A |
Gain Bandwidth Product fT | 300 MHz | 300 MHz |
Minimum Operating Temperature | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
DC Current Gain hFE Max | 200 at 10 mA, 2 V | - |
Height | 0.47 mm | - |
Length | 1.02 mm | - |
Packaging | Reel | Reel |
Width | 0.62 mm | - |
Brand | Nexperia | Nexperia |
DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 40 at 500 mA, 2 V | 200 |
Pd Power Dissipation | 430 mW | 590 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 10000 | 10000 |
Subcategory | Transistors | Transistors |
Part # Aliases | PBSS3540M T/R | - |
Unit Weight | 0.000028 oz | - |
Collector Emitter Saturation Voltage | - | - 50 mV |
Continuous Collector Current | - | - 500 mA |