PartNumber | PMDPB56XN | PMDPB56XN115 | PMDPB56XN,115 |
Description | - Bulk (Alt: PMDPB56XN115) | IGBT Transistors MOSFET 20V, N-Channel Trench MOSFET | |
Manufacturer | - | - | NXP Semiconductors |
Product Category | - | - | FETs - Arrays |
Series | - | - | - |
Packaging | - | - | Digi-ReelR |
Package Case | - | - | 6-UDFN Exposed Pad |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 6-HUSON (2x2) |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 510mW |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 170pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 3.1A |
Rds On Max Id Vgs | - | - | 73 mOhm @ 3.1A, 4.5V |
Vgs th Max Id | - | - | 1.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 2.9nC @ 4.5V |