 |  | | |
| PartNumber | PMDPB58UPE,115 | PMDPB58UPE PB-FREE | PMDPB58UPE |
| Description | MOSFET 20V, Dual P-Channel Trench MOSFET | ||
| Manufacturer | Nexperia | - | NXP |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 58 mOhms, 58 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 950 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 9.5 nC, 9.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.21 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 9 S, 9 S | - | - |
| Fall Time | 14 ns, 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns, 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns, 41 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 7 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMDPB58UPE,115 | MOSFET 20V, Dual P-Channel Trench MOSFET | |
| PMDPB58UPE,115 | MOSFET 2P-CH 20V 3.6A HUSON6 | ||
| PMDPB58UPE PB-FREE | New and Original | ||
| PMDPB58UPE115 | New and Original | ||
| PMDPB58UPE15 | New and Original | ||
| PMDPB58UPE | New and Original |