PMDPB85

PMDPB85UPE,115 vs PMDPB85UPE vs PMDPB85UPE115

 
PartNumberPMDPB85UPE,115PMDPB85UPEPMDPB85UPE115
DescriptionMOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/T- Bulk (Alt: PMDPB85UPE115)
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance82 mOhms, 82 mOhms--
Vgs th Gate Source Threshold Voltage950 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge8.1 nC, 8.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.17 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 P-Channel--
BrandNexperia--
Forward Transconductance Min6 S, 6 S--
Fall Time21 ns, 21 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns, 47 ns--
Typical Turn On Delay Time6 ns, 6 ns--
Series---
Package Case-6-UDFN Exposed Pad-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-HUSON (2x2)-
FET Type-2 P-Channel (Dual)-
Power Max-515mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-514pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-2.9A-
Rds On Max Id Vgs-103 mOhm @ 1.3A, 4.5V-
Vgs th Max Id-950mV @ 250μA-
Gate Charge Qg Vgs-8.1nC @ 4.5V-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PMDPB85UPE,115 MOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/T
PMDPB85UPE,115 MOSFET 2P-CH 20V 2.9A 6HUSON
PMDPB85UPE New and Original
PMDPB85UPE115 - Bulk (Alt: PMDPB85UPE115)
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