 |  | | |
| PartNumber | PMXB120EPEZ | PMXB120EPE | PMXB120EPE147 |
| Description | MOSFET 30 V, P-channel Trench MOSFET | - Bulk (Alt: PMXB120EPE147) | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-1010D-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2.4 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 8.33 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.000042 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMXB120EPEZ | MOSFET 30 V, P-channel Trench MOSFET | |
| PMXB120EPEZ | MOSFET P-CH 30V 2.4A 3DFN | ||
| PMXB120EPE | New and Original | ||
| PMXB120EPE147 | - Bulk (Alt: PMXB120EPE147) | ||
| PMXB120EPEZNEXPERIA | New and Original |