PSMN0

PSMN022-30PL,127 vs PSMN022-30BL,118 vs PSMN021-100YLX

 
PartNumberPSMN022-30PL,127PSMN022-30BL,118PSMN021-100YLX
DescriptionMOSFET N-CHAN 30V 30AMOSFET Std N-chanMOSFETMOSFET PSMN021-100YL/LFPAK/REEL 7" Q1
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTSMD/SMT
Package / CaseTO-220-3TO-263-3LFPAK56-5
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V100 V
Id Continuous Drain Current30 A30 A49 A
Rds On Drain Source Resistance22 mOhms22.6 mOhms16.8 mOhms
Vgs th Gate Source Threshold Voltage1.3 V-1.4 V
Vgs Gate Source Voltage10 V20 V20 V
Qg Gate Charge9 nC-65.6 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation41 W41 W147 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingTubeReelReel
Transistor Type1 N-Channel MOSFET1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Fall Time7 ns-31.1 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time29 ns-32.3 ns
Factory Pack Quantity508001500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17 ns-53.4 ns
Typical Turn On Delay Time12 ns-15.8 ns
Unit Weight0.211644 oz0.139332 oz0.002885 oz
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN022-30PL,127 MOSFET N-CHAN 30V 30A
PSMN022-30BL,118 MOSFET Std N-chanMOSFET
PSMN026-80YS,115 MOSFET N-CH 80V 27.5 mOhm Standard MOSFET
PSMN028-100YS,115 MOSFET N-CHANNEL 100V STD LEVEL MOSFET
PSMN027-100BS,118 MOSFET N-CH 100V 26.8 MOHM MOSFET
PSMN030-60YS,115 MOSFET Single N-Channel 60V 116A 56W 49.6mOhms
PSMN027-100PS,127 MOSFET N-CH 100V STD LEVEL MOSFET
PSMN025-100D,118 MOSFET TAPE13 PWR-MOS
PSMN030-150P,127 MOSFET RAIL PWR-MOS
PSMN025-80YLX MOSFET PSMN025-80YL/LFPAK/REEL 7" Q1/
PSMN023-40YLCX MOSFET N-channel 40V MOSFET
PSMN025-80YLX MOSFET N-CH 80V LFPAK56
PSMN028-100YS,115 MOSFET N-CH 100V 42A LFPAK
PSMN030-60YS,115 MOSFET N-CH 60V 29A LFPAK
PSMN027-100BS,118 IGBT Transistors MOSFET N-CH 100V 26.8 MOHM MOSFET
PSMN027-100XS,127 IGBT Transistors MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET
PSMN025-100D,118 MOSFET TAPE13 PWR-MOS
PSMN030-150B,118 MOSFET TAPE13 MOSFET
PSMN030-150P,127 RF Bipolar Transistors MOSFET RAIL PWR-MOS
PSMN027-100PS,127 MOSFET N-CH 100V TO220AB
PSMN022-30BL,118 MOSFET N-CH 30V 30A D2PAK
PSMN021-100YLX MOSFET N-CH 100V LFPAK56
PSMN022-30PL,127 MOSFET N-CH 30V TO220AB
PSMN026-80YS,115 MOSFET N-CH 80V 34A LFPAK
NXP Semiconductors
NXP Semiconductors
PSMN023-40YLCX MOSFET N-CH 40V 24A LFPAK
PSMN023-80LS,115 MOSFET N-CH 80V 34A QFN3333
PSMN022-30 New and Original
PSMN022-30PL POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
PSMN022-30PL127 New and Original
PSMN025-100D-11 New and Original
PSMN025-100D118 New and Original
PSMN026-80YS New and Original
PSMN027-100P New and Original
PSMN027-100PS New and Original
PSMN027-100XS127 - Bulk (Alt: PSMN027-100XS127)
PSMN028-100YS New and Original
PSMN030 New and Original
PSMN030-150B New and Original
PSMN030-150B.118 New and Original
PSMN030-150P MOSFET RAIL PWR-MOS
PSMN030-150P+127 Now Nexperia PSMN030-150P - Power Field-Effect Transistor, 55.5A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P
PSMN030-150P127 Now Nexperia PSMN030-150P - Power Field-Effect Transistor, 55.5A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P
PSMN025-100D,118-CUT TAPE New and Original
PSMN026-80YS,115-CUT TAPE New and Original
PSMN030-60YS,115-CUT TAPE New and Original
PSMN022-30BL118 New and Original
PSMN025-100D MOSFET Transistor, N-Channel, TO-252AA
PSMN030-60YS MOSFET,N CHANNEL,60V,29A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:60V, On Resistance Rds(on):19.1mohm, Rds(on) Test Voltage Vgs:10V, Thresh
PSMN027-100PS127 MOSFET,N CH,100V,37A,TO-220AB
PSMN028-100YS115 Now Nexperia Power Field-Effect Transistor, 30A I(D), 100V, 0.0275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
Top