 |  |  | |
| PartNumber | PSMN034-100BS,118 | PSMN034-100PS,127 | PSMN035-150B,118 |
| Description | MOSFET N-CH 100 V 34.5 MOHM MOSFET | MOSFET N-CH 100V STD LEVEL MOSFET | MOSFET TAPE13 PWR-MOS |
| Manufacturer | Nexperia | Nexperia | PHILIPS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 90 V | 100 V | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 62 mOhms | 62 mOhms | - |
| Vgs Gate Source Voltage | 4.4 V | 20 V | - |
| Pd Power Dissipation | 86 W | 86 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.211644 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4.8 V | - |
| Qg Gate Charge | - | 23.8 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.4 mm | - |
| Length | - | 10.3 mm | - |
| Type | - | N-Channel 100 V 34.5 mOhms Standard Level MOSFET in TO220 | - |
| Width | - | 4.7 mm | - |
| Fall Time | - | 9 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 28 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN034-100BS,118 | MOSFET N-CH 100 V 34.5 MOHM MOSFET | |
| PSMN034-100PS,127 | MOSFET N-CH 100V STD LEVEL MOSFET | ||
| PSMN045-80YS,115 | MOSFET N-CHAN 80V 17A | ||
| PSMN038-100YLX | MOSFET N-channel 100 V 37.5 mo FET | ||
| PSMN041-80YLX | MOSFET 80 V 41 mOhm logiclevel MOSFET | ||
| PSMN040-100MSEX | MOSFET PSMN040-100MSE/MLFPAK/REEL 7 | ||
| PSMN038-100YLX | MOSFET N-CH 100V 30A LFPAK | ||
| PSMN039-100YS,115 | MOSFET N-CH LFPAK | ||
| PSMN040-100MSEX | IGBT Transistors MOSFET PSMN040-100MSE/MLFPAK/REEL7 | ||
| PSMN035-150B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN035-150P,127 | RF Bipolar Transistors MOSFET RAIL PWR-MOS | ||
| PSMN038-100K,518 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
| PSMN034-100BS,118 | MOSFET N-CH 100V 32A D2PAK | ||
| PSMN045-80YS,115 | MOSFET N-CH 80V 24A LFPAK | ||
| PSMN034-100PS,127 | MOSFET N-CH 100V TO220AB | ||
| PSMN041-80YLX | MOSFET N-CH 80V 25A LFPAK | ||
NXP Semiconductors |
PSMN040-200W,127 | MOSFET N-CH 200V 50A SOT429 | |
| PSMN035-100LS,115 | IGBT Transistors MOSFET N-CHAN 100V 27A | ||
| PSMN030-60YS_1010 | New and Original | ||
| PSMN030150P | New and Original | ||
| PSMN034-100BS | MOSFET, N CHANNEL, 100V, 32A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0293ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN034-100PS | MOSFET,N CHANNEL,100V,32A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0293ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN035-100LS | New and Original | ||
| PSMN035-150 | New and Original | ||
| PSMN035-150B /T3 | New and Original | ||
| PSMN035-150B118 | - Bulk (Alt: PSMN035-150B118) | ||
| PSMN035-150P/B | New and Original | ||
| PSMN035-150P127 | Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN036-150D | New and Original | ||
| PSMN0360YS | New and Original | ||
| PSMN038 | New and Original | ||
| PSMN038-100K | 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA | ||
| PSMN038-100YL | New and Original | ||
| PSMN039-100YS | MOSFET,N CHANNEL,100V,28.1A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:28.1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0308ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN039-100YS , MAX8532E | New and Original | ||
| PSMN040-100MSE | New and Original | ||
| PSMN040-100MSE115 | New and Original | ||
| PSMN040-200W | MOSFET RAIL PWR-MOS | ||
| PSMN041-80YL | MOS Power Transistors LV ( 41V-100V) (Alt: PSMN041-80YL) | ||
| PSMN045-80YS | MOSFET,N CHANNEL,80V,24A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.037ohm, Rds(on) Test Voltage Vgs:10V, Thresh | ||
| PSMN04580YS115 | New and Original | ||
| PSMN035-150P.127 | Transistor: N-MOSFET, unipolar, 150V, 36A, 250W, TO220AB | ||
| PSMN035150P | New and Original | ||
| PSMN039-100YS,115-CUT TAPE | New and Original | ||
| PSMN040-100MSEX-CUT TAPE | New and Original | ||
| PSMN045-80YS,115-CUT TAPE | New and Original | ||
| PSMN035-150B | New and Original | ||
| PSMN035-150P | Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| PSMN038-100K518 | Now Nexperia Small Signal Field-Effect Transistor, 6.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
| PSMN041-80YL115 | Now Nexperia Power Field-Effect Transistor, 25A I(D), 80V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK |