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| PartNumber | PSMN8R5-100ESQ | PSMN8R5-100ESFQ |
| Description | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | MOSFET PSMN8R5-100ESF SOT226/I2PAK |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | I2PAK-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 100 A | 97 A |
| Rds On Drain Source Resistance | 22.6 mOhms | 8.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V |
| Qg Gate Charge | 111 nC | 44.5 nC |
| Pd Power Dissipation | 263 W | 183 W |
| Packaging | Tube | Tube |
| Brand | Nexperia | Nexperia |
| Fall Time | 43 ns | 23.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | 26.8 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 87 ns | 31.5 ns |
| Typical Turn On Delay Time | 20 ns | 16.8 ns |
| Unit Weight | 0.084199 oz | - |
| Number of Channels | - | 1 Channel |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN8R5-100ESQ | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | |
| PSMN8R5-100ESFQ | MOSFET PSMN8R5-100ESF SOT226/I2PAK | ||
| PSMN8R5-100ESQ | IGBT Transistors MOSFET PSMN8R5-100ES/I2PAK/RAILH | ||
| PSMN8R5-100ESFQ | MOSFET N-CHANNEL 100V 97A I2PAK | ||
| PSMN8R5-100ES | New and Original |