PartNumber | QPD1010 | QPD1013SR | QPD1011SR |
Description | RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN | RF JFET Transistors DC-2.7GHz 150W PAE 64.8% | RF JFET Transistors .03-1.2GHz 7W 50V GaN |
Manufacturer | Qorvo | Qorvo | Qorvo |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | HEMT | HEMT | HEMT |
Technology | GaN SiC | GaN SiC | GaN SiC |
Gain | 24.7 dB | 21.8 dB | 21 dB |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 50 V | - | 50 V |
Vgs Gate Source Breakdown Voltage | 145 V | - | 145 V |
Id Continuous Drain Current | 400 mA | 1.7 A | 1.46 A |
Output Power | 11 W | 178 W | 8.7 W |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Pd Power Dissipation | 13.5 W | 67 W | 13 W |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | QFN-16 | DFN-6 | SMD-8 |
Packaging | Waffle | Reel | Reel |
Configuration | Single | Single Triple Drain | - |
Operating Frequency | 4 GHz | 1.2 GHz to 2.7 GHz | 30 MHz to 1200 MHz |
Operating Temperature Range | - 40 C to + 85 C | - | - |
Series | QPD | - | QPD1011 |
Brand | Qorvo | Qorvo | Qorvo |
Development Kit | QPD1010-EVB1 | QPD1013EVB01 | QPD1011EVB01 |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 50 | 100 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
Part # Aliases | 1132873 | - | QPD1011 |
Unit Weight | 0.081130 oz | - | - |
Maximum Drain Gate Voltage | - | 65 V | 55 V |
Application | - | Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications | - |
Forward Transconductance Min | - | - | - |