| PartNumber | QPD1010 | QPD1013SR | QPD1011SR |
| Description | RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN | RF JFET Transistors DC-2.7GHz 150W PAE 64.8% | RF JFET Transistors .03-1.2GHz 7W 50V GaN |
| Manufacturer | Qorvo | Qorvo | Qorvo |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN SiC | GaN SiC |
| Gain | 24.7 dB | 21.8 dB | 21 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | - | 50 V |
| Vgs Gate Source Breakdown Voltage | 145 V | - | 145 V |
| Id Continuous Drain Current | 400 mA | 1.7 A | 1.46 A |
| Output Power | 11 W | 178 W | 8.7 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Pd Power Dissipation | 13.5 W | 67 W | 13 W |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | QFN-16 | DFN-6 | SMD-8 |
| Packaging | Waffle | Reel | Reel |
| Configuration | Single | Single Triple Drain | - |
| Operating Frequency | 4 GHz | 1.2 GHz to 2.7 GHz | 30 MHz to 1200 MHz |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | - | QPD1011 |
| Brand | Qorvo | Qorvo | Qorvo |
| Development Kit | QPD1010-EVB1 | QPD1013EVB01 | QPD1011EVB01 |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 50 | 100 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| Part # Aliases | 1132873 | - | QPD1011 |
| Unit Weight | 0.081130 oz | - | - |
| Maximum Drain Gate Voltage | - | 65 V | 55 V |
| Application | - | Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications | - |
| Forward Transconductance Min | - | - | - |