QPD1013SR

QPD1013SR
Mfr. #:
QPD1013SR
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1013SR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD1013SR more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
21.8 dB
Transistor Polarity:
N-Channel
Id - Continuous Drain Current:
1.7 A
Output Power:
178 W
Maximum Drain Gate Voltage:
65 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
67 W
Mounting Style:
SMD/SMT
Package / Case:
DFN-6
Packaging:
Reel
Application:
Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
Configuration:
Single Triple Drain
Operating Frequency:
1.2 GHz to 2.7 GHz
Brand:
Qorvo
Development Kit:
QPD1013EVB01
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R
***el Electronic
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1013 GaN RF Transistor
Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Image Part # Description
QPD1025L

Mfr.#: QPD1025L

OMO.#: OMO-QPD1025L

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
QPD1000

Mfr.#: QPD1000

OMO.#: OMO-QPD1000

RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
QPD1014SR

Mfr.#: QPD1014SR

OMO.#: OMO-QPD1014SR

RF JFET Transistors .03-1.2GHz 15W 50V GaN
QPD1013SR

Mfr.#: QPD1013SR

OMO.#: OMO-QPD1013SR

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1019

Mfr.#: QPD1019

OMO.#: OMO-QPD1019

RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1020SR

Mfr.#: QPD1020SR

OMO.#: OMO-QPD1020SR

RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
QPD1008

Mfr.#: QPD1008

OMO.#: OMO-QPD1008-1152

RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
QPD1015L

Mfr.#: QPD1015L

OMO.#: OMO-QPD1015L-1152

RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
QPD1009

Mfr.#: QPD1009

OMO.#: OMO-QPD1009-318

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
Availability
Stock:
Available
On Order:
1993
Enter Quantity:
Current price of QPD1013SR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$176.00
$176.00
25
$152.22
$3 805.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top