QPD1025L

QPD1025L
Mfr. #:
QPD1025L
Manufacturer:
Qorvo
Description:
RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1025L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD1025L more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
22.9 dB
Id - Continuous Drain Current:
28 A
Output Power:
1.5 kW
Maximum Drain Gate Voltage:
225 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
758 W
Mounting Style:
SMD/SMT
Package / Case:
NI-1230-4
Packaging:
Tray
Application:
Avionics, IFF Transponders
Configuration:
Dual Gate Dual Drain
Operating Frequency:
1 GHz to 1.1 GHz
Series:
QPD
Brand:
Qorvo
Development Kit:
QPD1025LEVB1
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
18
Subcategory:
Transistors
Tags
QPD102, QPD10, QPD1, QPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, .96 to 1.215 GHz, 1800 W, 65 V, 22.5 dB gain, NI-1230 Eared Pkg
QPD1025 & QPD1025L RF Input-Matched Transistors
Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. These transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. The QPD1025 and QPD1025L transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.
Part # Mfg. Description Stock Price
QPD1025L
DISTI # 772-QPD1025L
QorvoRF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
RoHS: Compliant
17
  • 1:$803.0000
QPD1025LEVB1
DISTI # 772-QPD1025LEVB1
QorvoRF Development Tools 1-1.1GHz 1500 Watt Eval Board
RoHS: Compliant
2
  • 1:$1,250.0000
Image Part # Description
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OMO.#: OMO-QPD1000

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OMO.#: OMO-QPD1013SR

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Mfr.#: QPD1009

OMO.#: OMO-QPD1009

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Mfr.#: QPD1004SR

OMO.#: OMO-QPD1004SR

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QPD1022SR

Mfr.#: QPD1022SR

OMO.#: OMO-QPD1022SR

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QPD1020SR

Mfr.#: QPD1020SR

OMO.#: OMO-QPD1020SR

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Mfr.#: QPD1003

OMO.#: OMO-QPD1003-RFMD

RF TRANSISTOR
QPD1015L

Mfr.#: QPD1015L

OMO.#: OMO-QPD1015L-1152

RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
QPD1223

Mfr.#: QPD1223

OMO.#: OMO-QPD1223-ON-SEMICONDUCTOR

EMITTER-PHOTOSENSOR PAIR 5MM
Availability
Stock:
34
On Order:
2017
Enter Quantity:
Current price of QPD1025L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$803.00
$803.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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