QPD27

QPD2730 vs QPD2731SR vs QPD2793

 
PartNumberQPD2730QPD2731SRQPD2793
DescriptionRF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaNRF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric DohertyRF JFET Transistors 2.62-2.69GHz GaN 200W 48V
ManufacturerQorvoCree, Inc.Qorvo
Product CategoryRF JFET TransistorsRF JFET TransistorsRF JFET Transistors
RoHSYYY
Transistor TypeHEMTHEMTHEMT
TechnologyGaN SiCGaN SiCGaN SiC
Gain16 dB17 dB19 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage48 V150 V-
Id Continuous Drain Current210 mA7.5 A-
Output Power36 W340 W200 W
Maximum Drain Gate Voltage55 V--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 85 C+ 225 C-
Pd Power Dissipation18.6 W--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseNI780-4H-37248-4NI400-2
PackagingWaffleReelTray
ConfigurationDualDual Common SourceSingle
Operating Frequency2.575 GHz to 2.635 GHz2620 MHz to 2690 MHz2.62 GHz to 2.69 GHz
Operating Temperature Range- 40 C to + 85 C--
SeriesQPD-QPD
BrandQorvoWolfspeed / CreeQorvo
Moisture SensitiveYes--
Product TypeRF JFET TransistorsRF JFET TransistorsRF JFET Transistors
Factory Pack Quantity2550500
SubcategoryTransistorsTransistorsTransistors
Vgs th Gate Source Threshold Voltage- 2.7 V, - 4.75 V- 3.8 V-
Part # Aliases1131813-1130771
Vgs Gate Source Breakdown Voltage---
Application--Microcell Base Station, W-CDMA / LTE
Forward Transconductance Min---
Manufacturer Part # Description RFQ
Qorvo
Qorvo
QPD2730 RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
QPD2795 RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
QPD2796 RF JFET Transistors 2.5-2.7GHz GaN 200W 48V
QPD2731SR RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty
QPD2793 RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
QPD2731 New and Original
QPD2793 RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
QPD2730 RF JFET Transistors QPD2730, 30W Antenna Dual Channel GaN
QPD2795 RF JFET Transistors QPD2795 360W 2.5-2.7GHz GaN Transisto
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