PartNumber | QPD2730 | QPD2731SR | QPD2793 |
Description | RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN | RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty | RF JFET Transistors 2.62-2.69GHz GaN 200W 48V |
Manufacturer | Qorvo | Cree, Inc. | Qorvo |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | HEMT | HEMT | HEMT |
Technology | GaN SiC | GaN SiC | GaN SiC |
Gain | 16 dB | 17 dB | 19 dB |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 48 V | 150 V | - |
Id Continuous Drain Current | 210 mA | 7.5 A | - |
Output Power | 36 W | 340 W | 200 W |
Maximum Drain Gate Voltage | 55 V | - | - |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 85 C | + 225 C | - |
Pd Power Dissipation | 18.6 W | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | NI780-4 | H-37248-4 | NI400-2 |
Packaging | Waffle | Reel | Tray |
Configuration | Dual | Dual Common Source | Single |
Operating Frequency | 2.575 GHz to 2.635 GHz | 2620 MHz to 2690 MHz | 2.62 GHz to 2.69 GHz |
Operating Temperature Range | - 40 C to + 85 C | - | - |
Series | QPD | - | QPD |
Brand | Qorvo | Wolfspeed / Cree | Qorvo |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 25 | 50 | 500 |
Subcategory | Transistors | Transistors | Transistors |
Vgs th Gate Source Threshold Voltage | - 2.7 V, - 4.75 V | - 3.8 V | - |
Part # Aliases | 1131813 | - | 1130771 |
Vgs Gate Source Breakdown Voltage | - | - | - |
Application | - | - | Microcell Base Station, W-CDMA / LTE |
Forward Transconductance Min | - | - | - |