QPD2730

QPD2730
Mfr. #:
QPD2730
Manufacturer:
Qorvo
Description:
RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
Lifecycle:
New from this manufacturer.
Datasheet:
QPD2730 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD2730 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
16 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
48 V
Id - Continuous Drain Current:
210 mA
Output Power:
36 W
Maximum Drain Gate Voltage:
55 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
18.6 W
Mounting Style:
SMD/SMT
Package / Case:
NI780-4
Packaging:
Waffle
Configuration:
Dual
Operating Frequency:
2.575 GHz to 2.635 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
QPD
Brand:
Qorvo
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
25
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.7 V, - 4.75 V
Part # Aliases:
1131813
Tags
QPD273, QPD27, QPD2, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
QPD2730
DISTI # 772-QPD2730
QorvoRF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
RoHS: Compliant
26
  • 1:$165.5500
  • 25:$144.4800
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Availability
Stock:
26
On Order:
2009
Enter Quantity:
Current price of QPD2730 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$165.55
$165.55
25
$144.48
$3 612.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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