QPD273

QPD2730 vs QPD2731SR vs QPD2731

 
PartNumberQPD2730QPD2731SRQPD2731
DescriptionRF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaNRF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty
ManufacturerQorvoCree, Inc.-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMTHEMT-
TechnologyGaN SiCGaN SiC-
Gain16 dB17 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage48 V150 V-
Id Continuous Drain Current210 mA7.5 A-
Output Power36 W340 W-
Maximum Drain Gate Voltage55 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C+ 225 C-
Pd Power Dissipation18.6 W--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseNI780-4H-37248-4-
PackagingWaffleReel-
ConfigurationDualDual Common Source-
Operating Frequency2.575 GHz to 2.635 GHz2620 MHz to 2690 MHz-
Operating Temperature Range- 40 C to + 85 C--
SeriesQPD--
BrandQorvoWolfspeed / Cree-
Moisture SensitiveYes--
Product TypeRF JFET TransistorsRF JFET Transistors-
Factory Pack Quantity2550-
SubcategoryTransistorsTransistors-
Vgs th Gate Source Threshold Voltage- 2.7 V, - 4.75 V- 3.8 V-
Part # Aliases1131813--
Manufacturer Part # Description RFQ
Qorvo
Qorvo
QPD2730 RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
QPD2731SR RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty
QPD2731 New and Original
QPD2730 RF JFET Transistors QPD2730, 30W Antenna Dual Channel GaN
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