QPD279 stock, QPD279, QPD2795


PartNumber	QPD2795	QPD2796	QPD2793
Description	RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN	RF JFET Transistors 2.5-2.7GHz GaN 200W 48V	RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
Manufacturer	Qorvo	Qorvo	Qorvo
Product Category	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
RoHS	Y	Y	Y
Transistor Type	HEMT	HEMT	HEMT
Technology	GaN SiC	GaN SiC	GaN SiC
Gain	22 dB	20 dB	19 dB
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	48 V	-	-
Id Continuous Drain Current	360 mA	-	-
Output Power	364 W	200 W	200 W
Maximum Drain Gate Voltage	55 V	-	-
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 85 C	-	-
Pd Power Dissipation	83.5 W	-	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	NI780-2	NI400-2	NI400-2
Packaging	Waffle	Tray	Tray
Configuration	Dual	Single	Single
Operating Frequency	2.5 GHz to 2.7 GHz	2.5 GHz to 2.7 GHz	2.62 GHz to 2.69 GHz
Operating Temperature Range	- 40 C to + 85 C	-	-
Series	QPD	QPD	QPD
Brand	Qorvo	Qorvo	Qorvo
Moisture Sensitive	Yes	-	-
Product Type	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
Factory Pack Quantity	250	250	500
Subcategory	Transistors	Transistors	Transistors
Vgs th Gate Source Threshold Voltage	- 2.7 V	-	-
Part # Aliases	1130777	1130963	1130771
Vgs Gate Source Breakdown Voltage	-	-	-
Application	-	Microcell Base Station, W-CDMA / LTE	Microcell Base Station, W-CDMA / LTE
Forward Transconductance Min	-	-	-

Search Part Number : "QPD279", Match & Start with "QPD279" - Total : 5

Manufacturer	Part #	Description
Qorvo	QPD2795	RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
	QPD2796	RF JFET Transistors 2.5-2.7GHz GaN 200W 48V
	QPD2793	RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
	QPD2793	RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
	QPD2795	RF JFET Transistors QPD2795 360W 2.5-2.7GHz GaN Transisto

QPD279