PartNumber | RM5N650T2 | RM5N650IP | RM5N650LD |
Description | MOSFET TO-220 MOSFET | MOSFET TO-251 MOSFET | |
Manufacturer | Rectron | Rectron | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-251-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 5 A | 5 A | - |
Rds On Drain Source Resistance | 900 mOhms | 900 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 20 nC | 20 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Rectron | Rectron | - |
Forward Transconductance Min | 4.8 S | 4.8 S | - |
Fall Time | 9 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 ns | 3 ns | - |
Factory Pack Quantity | 1000 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 50 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Pd Power Dissipation | - | 49 W | - |