PartNumber | RN1111(TE85L,F) | RN1111,LF(CT | RN1111MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Gen Purp Trans NPN SSM, 50V, 100A | Bipolar Transistors - Pre-Biased SSM TRANSISTOR Pd 50mW F 1Mhz (LF) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | - | N |
Configuration | Single | Single | Single |
Transistor Polarity | NPN | NPN | NPN |
Typical Input Resistor | 10 kOhms | 10 kOhms | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SSM-3 | SSM-3 | VESM-3 |
DC Collector/Base Gain hfe Min | 120 | 120 | 700 |
Maximum Operating Frequency | 250 MHz | 250 MHz | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Continuous Collector Current | 100 mA | 100 mA | 100 mA |
Peak DC Collector Current | 100 mA | 100 mA | - |
Pd Power Dissipation | 100 mW | 100 mW | 150 mW |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | RN1111 | - | RN1111MFV |
Packaging | Reel | Reel | Reel |
Collector Base Voltage VCBO | 50 V | - | 50 V |
DC Current Gain hFE Max | 700 | - | 120 @ 1mA @ 5V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Operating Temperature Range | - 55 C to + 150 C | - | - |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 3000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Channel Mode | - | Enhancement | - |
Maximum DC Collector Current | - | 100 mA | - |
Height | - | - | 0.5 mm |
Length | - | - | 1.2 mm |
Width | - | - | 0.8 mm |