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| PartNumber | RN1118(T5L,F,T) | RN1118MFV(TL3,T) | RN1118MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 47kohm | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 47Kohms x 10Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | N |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | NPN |
| Typical Input Resistor | 47 kOhms | - | 47 kOhms |
| Typical Resistor Ratio | 4.7 | - | 4.7 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-416-3 | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | 50 |
| Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
| Continuous Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 100 mW | - | 150 mW |
| Series | RN1118 | RN1118MFV | RN1118MFV |
| Packaging | Reel | Reel | Reel |
| Emitter Base Voltage VEBO | 25 V | - | 25 V |
| Brand | Toshiba | Toshiba | Toshiba |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 8000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000212 oz | - | - |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Collector Base Voltage VCBO | - | - | 50 V |
| Height | - | - | 1.2 mm |
| Length | - | - | 1.2 mm |
| Operating Temperature Range | - | - | - 65 C to + 150 C |
| Type | - | - | NPN Epitaxial Silicon Transistor |
| Width | - | - | 0.5 mm |